| PART |
Description |
Maker |
| SKDH116_12-L100 SKDH116_16-L100 SKDH116 SKDH116/12 |
MOSFET; ID (A): 0.02; VDS (V): 6; Pch : 0.1; |yfs| (S) typ: 0.024; PG (dB) typ: 24; Ciss (pF) typ: 1.75; NF (dB) typ: 1.5; IDSS (mA): -; Package: CMPAK-4
3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
| 2SK3717 |
N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC
|
| FCH22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
|
Fairchild Semiconductor
|
| XP8081 |
Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SK772 |
20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction Silicon FET AF Amplifier Applications
|
SANYO SEMICONDUCTOR CO LTD
|
| BF246A BF246B BF246C BF247C BF247A BF247B |
N-channel silicon junction field-effect transistors UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| FJX597JC FJX597JB FJX597JCTF |
Silicon N-Channel Junction FET
Si N-channel Junction FET
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK217 |
Silicon N-Channel Junction FET
|
Hitachi Semiconductor
|
| 2SK123 |
Silicon N-Channel Junction FET
|
http://
PANASONIC[Panasonic Semiconductor]
|
| 2SK2593 |
Silicon N-Channel Junction FET
|
Panasonic Semiconductor
|
